BM3353 Fundamendals of electric device

                                                           


Prepared by  
     S.Santhosh (Admin) 
Important questions 
share it a link alone

Don't waste my hardwork and valuable time
Don't share as screenshot kind request

based on views next exams questions are yet to be updated
most viewed dept will get update at first So Dont screenshot and share

UNIT-1

1.PN Junction Diode 2.forward and reverse bias characteristics 3.Switching Characteristics
UNIT-2,3
1.BJT (NPN,PNP) All characteristics 2.hybrid pie model ,DMOSFET 3.MOSFET (Fully Enhancement,Depletion) 4.CE,CC,CB
UNIT-4
1.MESFET, FINFET, PINFET, CNTFET 2.Photodiode, Schottky barrier diode- Zener
3. Gallium Arsenide device, LASER diode
UNIT-5


1.LED, LCD, Opto Coupler, Solar cell 2SCR, Triac, Power BJT
-3.DMOS-VMOS


**Very important questions are bolded and may be asked based on this topic

PART-C

1.Compulsory Questions {a case study where the student will have to read and analyse the subject }
mostly asked from unit 2, 5(OR) a situation given and you have to answer on your own

For more details, Important questions for other subjects join us through WhatsApp
 Click here     Join me on WhatsApp
 Above link is made to connect Admin with viewer's for better improvements and feedback

don't waste my hardwork and valuable time

As Engineer i think you know how to respect another
Share it as link alone . don't share it as screenshot or any text material if u found this anywhere kindly report me . #Admin   WhatsApp

Contact uS *These questions are expected for the exams This may or may not be asked for exams
    All the best.... from admin Santhosh

          Thanks for your love and support guys keep supporting and share let the Engineers know about Us and leave a comment below for better improvements 
If there is any doubt feel free to ask me I will clear if I can or-else I will say some solutions ..get me through WhatsApp for instant updates                                                      ~$tuff$£ctor
SYllabuS
UNIT I SEMICONDUCTOR DIODE
PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current densities, forward and reverse bias characteristics, Transition and Diffusion Capacitances, Switching Characteristics, Breakdown in PN Junction Diodes.
UNIT II BIPOLAR JUNCTION TRANSISTORS
NPN -PNP -Operations-Early effect-Current equations – Input and Output characteristics of CE, CB, CC - Hybrid -Ï€ model - h-parameter model, Ebers Moll Model- Gummel Poon- model, Multi Emitter Transistor.
UNIT III FIELD EFFECT TRANSISTORS
MOSFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- Threshold voltage -Channel length modulation, small signal Characteristics, DMOSFET, E-MOSFET- Characteristics – Comparison of MOSFET with BJT.
UNIT IV SPECIAL SEMICONDUCTOR DEVICES
Metal-Semiconductor Junction - MESFET, FINFET, PINFET, CNTFET, DUAL GATE MOSFET, Point Contact Diode, p-i-n Diode, Avalanche Photodiode, Schottky barrier diode- Zener diodeVaractor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.
UNIT V POWER DEVICES AND DISPLAY DEVICES
UJT, Thyristor - SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Opto Coupler, Solar cell, CCD.

Santhosh (Admin)

TO THE ENGINEER FOR THE ENGINNEER BY AN ENGINEER Kindly join Us on social media's link at the top corner

Post a Comment

Please Select Embedded Mode To Show The Comment System.*

Previous Post Next Post